Toshiba Launches 1200V Voltage-Resistant SiC Schottky Barrier Diode

On January 27, 2015, Toshiba launched the Schottky barrier diode "TRS20J120C" with a withstand voltage of +1200V and made of SiC (silicon carbide). According to the company, "With the use of SiC materials, the withstand voltage of Schottky barrier diodes up to +200V when using Si (silicon) materials is increased to +1200V."

The new product can be used for AC 400V high voltage lines. For specific applications, Toshiba cited power factor correction (PFC) circuits for switching power supplies, DC-DC converters, inverters for photovoltaic power generation, uninterruptible power supplies (UPS), and wireless power supplies for vehicles.

The element structure of the TRS20J120C is not an ordinary Schottky barrier diode (SBD) structure but uses a junction barrier Schottky (JBS) configuration. Instead of directly bonding the metal and the n-channel semiconductor, the two are joined via a p-channel semiconductor. Toshiba said, "Compared with the SBD structure, the JBS structure can reduce the leakage current, so it can work stably under high voltage and high current conditions."

The new product's reverse-repetition peak voltage (VRRM) is +1200V. The maximum forward current (IF) is 20A at DC and 310A at pulse. The current squared time product (I2t) is 112.5A2s. The peak forward voltage (VFM) is 1.7V (the maximum value when the forward current is 20A). The reverse repeat peak current (IRRM) is 90 μA (maximum). The junction capacitance is 105 pF (nominal). The package uses TO-3P(N). The maximum junction temperature guarantees +175°C. The price was not announced. (Special Contributor: Yamashita is better than himself)