China's Invention of Semi-floating-gate Transistors Helps Gain Manufacturing Discourse

Chinese researchers reported in the US "Science" magazine on the 8th that they had made breakthroughs in the research of basic cell transistors in integrated circuits and invented a new type of basic microelectronic device called semi-floating-gate transistors that can erase data. It's easier and faster. According to reports, its successful development will help China master the core technology of integrated circuits, and gradually gain more say in chip design and manufacturing.

Wang Pengfei, a research leader and a professor at Fudan University, said: "In China, the integrated circuit industry mainly relies on the introduction and absorption of mature technologies from abroad. There is a lack of core technologies in microelectronics core devices and integrated processes. Successful development of semi-floating-gate transistors will help our country to grasp The core technology of integrated circuits has gradually gained more say in chip design and manufacturing."

According to Wang Pengfei, metal-oxide-semiconductor field-effect transistors (MOSFETs) are currently mainstream devices in integrated circuits. The progress in the past few decades has caused the size of MOSFET transistors to shrink and become closer to their physical limits. The structure and new principles of transistors have become urgently needed by the industry. Half-floating-gate transistors are made by tunneling field-effect transistors (TFETs) embedded in a MOSFET transistor that is widely used in low-power circuits. Its advantages are smaller size, simpler structure, faster read and write speed, and the efficiency of one such transistor is comparable to multiple MOSFET transistors.