Various transient voltages can damage the transistor EB junction or CE junction breakdown. In particular, when the transistor collector is inductive (coil, transformer, motor) load, a high voltage back EMF is generated, which often damages the transistor. The construction uses a TVS tube as a protector.
August 12, 2024
1. Multimeter structure (500 type) The multimeter consists of three main parts: the meter head, the measuring circuit and the changeover switch. (1) Header: It is a high-sensitivity magneto-electric...
Probe current voltage pin 420*4450 head diameter 5.0 over current current and voltage pin Despite the emergence of power semiconductor components such as power field effect VDMOS and insulated gate...
Zener diode (Zener Diod) Principle A: It works in the reverse breakdown state of the voltage, when the reverse voltage reaches and exceeds the stable voltage, the reverse current suddenly increases,...
Diodes Incorporated's new LED driver AL1696 is suitable for a wide range of Triac dimmable lighting applications, especially retrofit lamps. The new product integrates MOSFETs, eliminating the need...
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August 12, 2024
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